DIODES ZXMP6A16DN8TC

DIODES · FETs & Power MOSFETs · MPN ZXMP6A16DN8TC

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Specifications

Current - Continuous Drain(Id)3.9A
Pd - Power Dissipation2.15W
RDS(on)125mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage60V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)56.4pF
Number2 P-Channel
Input Capacitance(Ciss)1.021nF
Gate Charge(Qg)24.2nC@10V
Operating Temperature-
Output Capacitance(Coss)83.1pF

Technical details

3.9A 2.15W 125mΩ@4.5V 1V 2 P-Channel SO-8 FET, MOSFET Arrays RoHS

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