DIODES · FETs & Power MOSFETs · MPN ZXMP6A16DN8QTA
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| Current - Continuous Drain(Id) | 3.9A |
|---|---|
| Pd - Power Dissipation | 1.25W |
| RDS(on) | 125mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 60V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 56.4pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 1.021nF |
| Gate Charge(Qg) | 24.2nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 83.1pF |
3.9A 1.25W 125mΩ@4.5V 1V 2 P-Channel SOIC-8 FET, MOSFET Arrays RoHS