DIODES ZXMP3A17E6TA

DIODES · FETs & Power MOSFETs · MPN ZXMP3A17E6TA

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Specifications

Gate Charge(Qg)15.8nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)113pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)78pF
RDS(on)70mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)630pF
TypeP-Channel

Technical details

P-Channel 30V 4A 1.7W Surface Mount SOT-26

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