DIODES ZXMP3A16N8TA

DIODES · FETs & Power MOSFETs · MPN ZXMP3A16N8TA

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Specifications

Gate Charge(Qg)17.2nC@5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)6.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation1.9W
Reverse Transfer Capacitance (Crss@Vds)229pF
RDS(on)40mΩ
Number1 P-Channel
Input Capacitance(Ciss)1.022nF

Technical details

P-Channel 30V 6.7A 1.9W Surface Mount SO-8

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