DIODES ZXMP10A18GTA

DIODES · FETs & Power MOSFETs · MPN ZXMP10A18GTA

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Specifications

Gate Charge(Qg)26.9nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)3.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)76pF
RDS(on)190mΩ@6V
Number1 P-Channel
Input Capacitance(Ciss)1.055nF
TypeP-Channel

Technical details

100V 3.7A 4V 2W 190mΩ@6V 1 P-Channel P-Channel SOT-223-4 Single FETs, MOSFETs RoHS

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