DIODES ZXMP10A17E6TA

DIODES · FETs & Power MOSFETs · MPN ZXMP10A17E6TA

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Specifications

Gate Charge(Qg)10.7nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)36.6pF
Current - Continuous Drain(Id)1.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)29.8pF
RDS(on)450mΩ@6V
Number1 P-Channel
Input Capacitance(Ciss)424pF

Technical details

P-Channel 100V 1.6A 1.7W Surface Mount SOT-26

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