DIODES ZXMP10A13FQTA

DIODES · FETs & Power MOSFETs · MPN ZXMP10A13FQTA

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Specifications

Gate Charge(Qg)3.5nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)13.1pF
Current - Continuous Drain(Id)700mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation806mW
Reverse Transfer Capacitance (Crss@Vds)10.8pF
RDS(on)1Ω@10V;1.45Ω@6V
Number1 P-Channel
Input Capacitance(Ciss)141pF

Technical details

P-Channel 100V 0.7A 806mW Surface Mount SOT-23

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