DIODES ZXMN7A11GQTA

DIODES · FETs & Power MOSFETs · MPN ZXMN7A11GQTA

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Specifications

Drain to Source Voltage70V
Gate Charge(Qg)7.4nC@10V
Current - Continuous Drain(Id)3.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)21pF
RDS(on)130mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)298pF

Technical details

70V 3.8A 1V 2W 130mΩ@10V 1 N-channel SOT-223 Single FETs, MOSFETs RoHS

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