DIODES ZXMN6A25GTA

DIODES · FETs & Power MOSFETs · MPN ZXMN6A25GTA

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Specifications

Gate Charge(Qg)11nC@5V;20.4nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)104pF
Current - Continuous Drain(Id)6.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation3.9W
Reverse Transfer Capacitance (Crss@Vds)64pF
RDS(on)50mΩ@10V;70mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.063nF
TypeN-Channel

Technical details

N-Channel 60V 6.7A 3.9W Surface Mount SOT-223

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