DIODES ZXMN6A25DN8TA

DIODES · FETs & Power MOSFETs · MPN ZXMN6A25DN8TA

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Specifications

Current - Continuous Drain(Id)5A
RDS(on)70mΩ@4.5V
Pd - Power Dissipation2.1W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)64pF
Number2 N-Channel
Input Capacitance(Ciss)1.063nF
Gate Charge(Qg)20.4nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)104pF

Technical details

N-Channel Array 60V 2.1W Surface Mount SO-8

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