DIODES · FETs & Power MOSFETs · MPN ZXMN6A11DN8TA
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| Current - Continuous Drain(Id) | 3.2A |
|---|---|
| Pd - Power Dissipation | 1.25W |
| RDS(on) | 120mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 17.1pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 330pF |
| Gate Charge(Qg) | 5.7nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 35.2pF |
N-Channel Array 60V 3.2A 1.25W Surface Mount SO-8