DIODES ZXMN6A09KQTC

DIODES · FETs & Power MOSFETs · MPN ZXMN6A09KQTC

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)29nC@10V
Current - Continuous Drain(Id)7.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation4.3W
Reverse Transfer Capacitance (Crss@Vds)64pF
RDS(on)40mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.426nF

Technical details

60V 7.7A 3V 4.3W 40mΩ@10V 1 N-channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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