DIODES ZXMN6A09GTA

DIODES · FETs & Power MOSFETs · MPN ZXMN6A09GTA

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Specifications

Gate Charge(Qg)24.2nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)121pF
Current - Continuous Drain(Id)7.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.9W
Reverse Transfer Capacitance (Crss@Vds)59pF
RDS(on)30mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.407nF
TypeN-Channel

Technical details

N-Channel 60V 7.5A 3.9W Surface Mount SOT-223

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