DIODES ZXMN6A09DN8TA

DIODES · FETs & Power MOSFETs · MPN ZXMN6A09DN8TA

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Specifications

Current - Continuous Drain(Id)5.6A
Pd - Power Dissipation1.25W
RDS(on)60mΩ@4.5V
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage60V
Reverse Transfer Capacitance (Crss@Vds)59pF
Number2 N-Channel
Input Capacitance(Ciss)1.407nF
Gate Charge(Qg)-
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 60V 5.6A 1.25W Surface Mount SO-8

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