DIODES ZXMN6A08KTC

DIODES · FETs & Power MOSFETs · MPN ZXMN6A08KTC

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Specifications

Gate Charge(Qg)3.8nC@4.5V
Drain to Source Voltage60V
Current - Continuous Drain(Id)7.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation8.94W
Reverse Transfer Capacitance (Crss@Vds)24.1pF
RDS(on)150mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)459pF

Technical details

N-Channel 60V 7.9A 8.94W Surface Mount TO-252

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