DIODES ZXMN6A08GTA

DIODES · FETs & Power MOSFETs · MPN ZXMN6A08GTA

No reviews yet — be the first to review DIODES ZXMN6A08GTA.

Specifications

Drain to Source Voltage60V
Gate Charge(Qg)5.8nC@10V
Current - Continuous Drain(Id)5.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)24.1pF
RDS(on)80mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)459pF

Technical details

N-Channel 60V 5.3A 2W Surface Mount SOT-223

Related FETs & Power MOSFETs