DIODES · FETs & Power MOSFETs · MPN ZXMN6A08GQTC
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 5.8nC@10V |
| Current - Continuous Drain(Id) | 5.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 24.1pF |
| RDS(on) | 80mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 459pF |
60V 5.3A 1V 2W 80mΩ@10V 1 N-channel SOT-223-3 Single FETs, MOSFETs RoHS