DIODES ZXMN6A08GQTA

DIODES · FETs & Power MOSFETs · MPN ZXMN6A08GQTA

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)5.8nC@10V
Output Capacitance(Coss)44.2pF
Current - Continuous Drain(Id)5.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation3.9W
Reverse Transfer Capacitance (Crss@Vds)24.1pF
RDS(on)80mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)459pF

Technical details

N-Channel 60V 5.3A 3.9W Surface Mount SOT-223-3

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