DIODES ZXMN6A08E6TA

DIODES · FETs & Power MOSFETs · MPN ZXMN6A08E6TA

No reviews yet — be the first to review DIODES ZXMN6A08E6TA.

Specifications

Gate Charge(Qg)5.8nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)44.2pF
Current - Continuous Drain(Id)3.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)24.1pF
RDS(on)150mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)459pF
Type-

Technical details

N-Channel 60V 3.5A 1.7W Surface Mount SOT-26

Related FETs & Power MOSFETs