DIODES · FETs & Power MOSFETs · MPN ZXMN6A08E6QTA
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 3.7nC@4.5V |
| Current - Continuous Drain(Id) | 3.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 8.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 24.1pF |
| RDS(on) | 150mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 459pF |
60V 3.5A 1V 8.8W 150mΩ@4.5V 1 N-channel SOT-26 Single FETs, MOSFETs RoHS