DIODES ZXMN6A07FQTA

DIODES · FETs & Power MOSFETs · MPN ZXMN6A07FQTA

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Specifications

Gate Charge(Qg)3.2nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)1.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation625mW
Reverse Transfer Capacitance (Crss@Vds)8.7pF
RDS(on)350mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)166pF

Technical details

60V 1.4A 3V 625mW 350mΩ@4.5V 1 N-channel SOT-23-3 Single FETs, MOSFETs RoHS

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