DIODES · FETs & Power MOSFETs · MPN ZXMN4A06GQTA
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| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 216W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 50mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 746pF |
40V 7A 1V 216W 50mΩ@10V 1 N-channel SOT-223-3 Single FETs, MOSFETs RoHS