DIODES ZXMN3G32DN8TA

DIODES · FETs & Power MOSFETs · MPN ZXMN3G32DN8TA

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Specifications

Current - Continuous Drain(Id)7.1A
RDS(on)-
Pd - Power Dissipation2.1W
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)65pF
Number2 N-Channel
Input Capacitance(Ciss)472pF
Gate Charge(Qg)10.5nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)178pF

Technical details

N-Channel Array 30V 7.1A 2.1W Surface Mount SO-8

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