DIODES ZXMN3F31DN8TA

DIODES · FETs & Power MOSFETs · MPN ZXMN3F31DN8TA

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Specifications

Current - Continuous Drain(Id)7.3A
Pd - Power Dissipation2.1W
RDS(on)24mΩ@10V
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)71pF
Number2 N-Channel
Input Capacitance(Ciss)608pF
Gate Charge(Qg)12.9nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 30V 7.3A 2.1W Surface Mount SO-8

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