DIODES ZXMN3B04N8TA

DIODES · FETs & Power MOSFETs · MPN ZXMN3B04N8TA

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)23.1nC@4.5V
Current - Continuous Drain(Id)8.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)184pF
RDS(on)40mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.48nF
TypeN-Channel

Technical details

N-Channel 30V 8.9A 3W Surface Mount SO-8

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