DIODES · FETs & Power MOSFETs · MPN ZXMN3B01FTC
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| Gate Charge(Qg) | 2.93nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 625mW |
| RDS(on) | 150mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 258pF |
30V 700mV 625mW 150mΩ@4.5V 1 N-channel SOT-23-3 Single FETs, MOSFETs RoHS