DIODES ZXMN3B01FTA

DIODES · FETs & Power MOSFETs · MPN ZXMN3B01FTA

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Specifications

Gate Charge(Qg)2.93nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation625mW
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)150mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)258pF

Technical details

N-Channel 30V 2A 0.625W Surface Mount SOT-23

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