DIODES ZXMN3AM832TA

DIODES · FETs & Power MOSFETs · MPN ZXMN3AM832TA

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)3.9nC@10V
Current - Continuous Drain(Id)3.7A
Output Capacitance(Coss)38pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation3W
RDS(on)180mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)20pF
Input Capacitance(Ciss)190pF
TypeN-Channel

Technical details

30V 3.7A 1V 3W 180mΩ@4.5V N-Channel Single FETs, MOSFETs RoHS

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