DIODES ZXMN3A14FTA

DIODES · FETs & Power MOSFETs · MPN ZXMN3A14FTA

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Specifications

Gate Charge(Qg)8.6nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)3.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation1W
RDS(on)65mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)448pF

Technical details

30V 3.2A 2.2V 1W 65mΩ@10V 1 N-channel SOT-23 Single FETs, MOSFETs RoHS

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