DIODES ZXMN3A06DN8TA

DIODES · FETs & Power MOSFETs · MPN ZXMN3A06DN8TA

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Specifications

Current - Continuous Drain(Id)6.2A
Pd - Power Dissipation2.1W
RDS(on)50mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)83.5pF
Number2 N-Channel
Input Capacitance(Ciss)796pF
Gate Charge(Qg)17.5nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)137pF

Technical details

N-Channel Array 30V 6.2A 2.1W Surface Mount SO-8

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