DIODES · FETs & Power MOSFETs · MPN ZXMN3A04DN8TA
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| Configuration | Common source |
|---|---|
| Current - Continuous Drain(Id) | 8.5A |
| RDS(on) | 20mΩ@10V |
| Pd - Power Dissipation | 1.25W |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 30V |
| Reverse Transfer Capacitance (Crss@Vds) | 218pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.89nF |
| Gate Charge(Qg) | 36.8nC@10V |
| Operating Temperature | -55℃~+150℃ |
8.5A 20mΩ@10V 1.25W 1V 2 N-Channel SO-8 FET, MOSFET Arrays RoHS