DIODES ZXMN3A03E6TA

DIODES · FETs & Power MOSFETs · MPN ZXMN3A03E6TA

No reviews yet — be the first to review DIODES ZXMN3A03E6TA.

Specifications

Gate Charge(Qg)12.6nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)104pF
Current - Continuous Drain(Id)4.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)58.5pF
RDS(on)50mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)600pF
TypeN-Channel

Technical details

N-Channel 30V 4.6A 1.7W Surface Mount SOT-26

Related FETs & Power MOSFETs