DIODES ZXMN3A02X8TA

DIODES · FETs & Power MOSFETs · MPN ZXMN3A02X8TA

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Specifications

Gate Charge(Qg)26.8nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)209pF
Current - Continuous Drain(Id)5.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.1W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)25mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.4nF

Technical details

N-Channel 30V 5.3A 1.1W Surface Mount MSOP-8

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