DIODES ZXMN3A01ZTA

DIODES · FETs & Power MOSFETs · MPN ZXMN3A01ZTA

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Specifications

Gate Charge(Qg)2.6nC
Drain to Source Voltage30V
Current - Continuous Drain(Id)3.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.12W
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)120mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)186pF

Technical details

N-Channel 30V 3.3A 2.12W Surface Mount SOT-89

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