DIODES ZXMN3A01FQTA

DIODES · FETs & Power MOSFETs · MPN ZXMN3A01FQTA

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Specifications

Output Capacitance(Coss)38pF
Pd - Power Dissipation625mW
Configuration-
Drain to Source Voltage30V
Gate Charge(Qg)3.9nC@10V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)180mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)190pF

Technical details

625mW 30V 2A 2.5V 180mΩ@10V 1 N-channel N-Channel SOT-23-3 Single FETs, MOSFETs RoHS

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