DIODES · FETs & Power MOSFETs · MPN ZXMN3A01E6TA
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| Gate Charge(Qg) | 2.3nC@5V;3.9nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 180mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 190pF |
30V 1V 1.1W 180mΩ@4.5V 1 N-channel SOT-26 Single FETs, MOSFETs RoHS