DIODES · FETs & Power MOSFETs · MPN ZXMN2B03E6TA
No reviews yet — be the first to review DIODES ZXMN2B03E6TA.
| Gate Charge(Qg) | 14.5nC |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 5.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 136pF |
| RDS(on) | 40mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.16nF |
N-Channel 20V 5.4A 1.1W Surface Mount SOT-26