DIODES ZXMN2B01F

DIODES · FETs & Power MOSFETs · MPN ZXMN2B01F

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Specifications

Gate Charge(Qg)4.8nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)2.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation625mW
Reverse Transfer Capacitance (Crss@Vds)46pF
RDS(on)100mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)370pF

Technical details

20V 2.4A 625mW Surface Mount SOT-23

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