DIODES · FETs & Power MOSFETs · MPN ZXMN2A04DN8TA
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| Configuration | Common source |
|---|---|
| Current - Continuous Drain(Id) | 5.9A |
| Pd - Power Dissipation | 1.25W |
| RDS(on) | 35mΩ@2.5V |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Drain to Source Voltage | 20V |
| Reverse Transfer Capacitance (Crss@Vds) | 386pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.88nF |
| Gate Charge(Qg) | 22.1nC@5V |
| Operating Temperature | -55℃~+150℃ |
5.9A 1.25W 35mΩ@2.5V 700mV 2 N-Channel SO-8 FET, MOSFET Arrays RoHS