DIODES ZXMN2A01FTA

DIODES · FETs & Power MOSFETs · MPN ZXMN2A01FTA

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Specifications

Gate Charge(Qg)3nC@10V
Drain to Source Voltage20V
Output Capacitance(Coss)59pF
Current - Continuous Drain(Id)2.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation806mW
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)225mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)303pF
TypeN-Channel

Technical details

N-Channel 20V 2.2A 806mW Surface Mount SOT-23

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