DIODES · FETs & Power MOSFETs · MPN ZXMN2A01E6TA
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| Gate Charge(Qg) | 3nC |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 3.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 1.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 120mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 303pF |
N-Channel 20V 3.1A 1.1W Surface Mount SOT-26