DIODES · FETs & Power MOSFETs · MPN ZXMN10B08E6TA
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| Gate Charge(Qg) | 9.2nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 1.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| RDS(on) | 300mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 497pF |
100V 1.9A 3V 1.1W 300mΩ@4.5V 1 N-channel SOT-26 Single FETs, MOSFETs RoHS