DIODES · FETs & Power MOSFETs · MPN ZXMN10A25GTA
No reviews yet — be the first to review DIODES ZXMN10A25GTA.
| Gate Charge(Qg) | 17nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 57pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| RDS(on) | 125mΩ@10V;150mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 859pF |
| Type | N-Channel |
N-Channel 100V 4A 3.9W Surface Mount SOT-223