DIODES · FETs & Power MOSFETs · MPN ZXMN10A11KTC
No reviews yet — be the first to review DIODES ZXMN10A11KTC.
| Gate Charge(Qg) | 5.4nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 3.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 8.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 350mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 274pF |
100V 3.5A 2V 8.5W 350mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS