DIODES ZXMN10A11GTA

DIODES · FETs & Power MOSFETs · MPN ZXMN10A11GTA

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Specifications

Gate Charge(Qg)5.4nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)21pF
Current - Continuous Drain(Id)2.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)350mΩ@10V;450mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)274pF
TypeN-Channel

Technical details

N-Channel 100V 2.4A 2W Surface Mount SOT-223

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