DIODES ZXMN10A11G

DIODES · FETs & Power MOSFETs · MPN ZXMN10A11G

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Specifications

Gate Charge(Qg)3.5nC@6V
Drain to Source Voltage100V
Current - Continuous Drain(Id)2.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation16W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)350mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)274pF

Technical details

100V 2.4A 16W Surface Mount SOT-223

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