DIODES · FETs & Power MOSFETs · MPN ZXMN10A09KTC
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| Gate Charge(Qg) | 17.2nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 7.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 10.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF |
| RDS(on) | 100mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.313nF |
N-Channel 100V 7.7A 10.1W Surface Mount TO-263