DIODES · FETs & Power MOSFETs · MPN ZXMN10A08DN8TA
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| Current - Continuous Drain(Id) | 2.1A |
|---|---|
| RDS(on) | 250mΩ@10V |
| Pd - Power Dissipation | 1.8W |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Drain to Source Voltage | 100V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 14.2pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 405pF |
| Gate Charge(Qg) | 4.2nC@5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 28.2pF |
N-Channel Array 100V 2.1A 1.8W Surface Mount SO-8