DIODES ZXMN10A07ZTA

DIODES · FETs & Power MOSFETs · MPN ZXMN10A07ZTA

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Specifications

Gate Charge(Qg)2.9nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)1.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2.6W
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)900mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)138pF

Technical details

N-Channel 100V 1.4A 2.6W Surface Mount SOT-89

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