DIODES ZXMN10A07FTA

DIODES · FETs & Power MOSFETs · MPN ZXMN10A07FTA

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Specifications

Gate Charge(Qg)2.9nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)760mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation806mW
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)280pF
TypeN-Channel

Technical details

N-Channel 100V 806mW Surface Mount SOT-23

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